RAMAN STUDY OF LASER ANNEALED SILICON

被引：57

作者：

MORHANGE, JF

KANELLIS, G

BALKANSKI, M

机构：

[1] Laboratoire de Physique des Solides, associé au C.N.R.S., Université Pierre et Marie Curie, 75230 PARIS CEDEX 05, 4, Place Jussieu

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 11期

关键词：

D O I：

10.1016/0038-1098(79)90392-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Raman spectroscopy of laser annealed implanted Silicon shows a phonon peak shifted up to ten cm-1 compared with a perfect crystalline sample. This shifted peak is interpreted as being due to the finite size of microcrystallites existing in the annealed region where the energy is below the fusion threshold. A simple model describing the vibrationnal properties of such crystallites has been established and compared to the experimental results. © 1979.

引用

页码：805 / 808

页数：4

共 7 条

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[4] KANELLIS G, UNPUBLISHED
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[6] ROLE OF STRESSES IN ANNEALING OF ION-IMPLANTATION DAMAGE IN SI
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 21 - 23
[7] TSENG WF, 1978, APPL PHYS LETT, V32, P825

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