ROLE OF STRESSES IN ANNEALING OF ION-IMPLANTATION DAMAGE IN SI

被引：7

作者：

SESHAN, K ^{[1
]}

EERNISSE, EP ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 01期

关键词：

D O I：

10.1063/1.90168

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent results showing a crystallographic orientation dependence of growth kinetics, secondary defects, and stress relief in annealing of ion-implanted Si are shown to be self-consistent if interpreted in terms of the influence of stresses upon annealing processes. The stress influence proposed is microplastic shear which is induced in [112] directions on (111) planes inclined to the implant surface by the biaxial stress created in the implant region by ion-implantation damage. The shear stresses are shown to be dependent on crystallographic orientation in a manner consistent with the model.

引用

页码：21 / 23

页数：3

共 5 条

[1] CSPREGI L, 1976, APPL PHYS LETT, V29, P92
[2] SENSITIVE TECHNIQUE FOR STUDYING ION-IMPLANTATION DAMAGE
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (12) : 581 - &
[3] CRYSTAL GROWTH AND DISLOCATIONS
FRANK, FC
[J]. ADVANCES IN PHYSICS, 1952, 1 (01) : 91 - +
[4] DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON
MADER, S
MICHEL, AE
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 33 (02): : 793 - 805
[5] MULLER H, 1975, APPL PHYS LETT, V26, P292, DOI 10.1063/1.88161

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