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NUCLEATION OF MICROCRYSTALLITES IN PHOSPHORUS-DOPED SI-H FILMS
被引:34
作者
:
MISHIMA, Y
论文数:
0
引用数:
0
h-index:
0
MISHIMA, Y
HAMASAKI, T
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, T
KURATA, H
论文数:
0
引用数:
0
h-index:
0
KURATA, H
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1981年
/ 20卷
/ 02期
关键词
:
D O I
:
10.1143/JJAP.20.L121
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:L121 / L123
页数:3
相关论文
共 10 条
[1]
Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances
[J].
Bruggeman, DAG
论文数:
0
引用数:
0
h-index:
0
Bruggeman, DAG
.
ANNALEN DER PHYSIK,
1935,
24
(07)
:636
-664
[2]
LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
[J].
HAMASAKI, T
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, T
;
KURATA, H
论文数:
0
引用数:
0
h-index:
0
KURATA, H
;
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
;
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
.
APPLIED PHYSICS LETTERS,
1980,
37
(12)
:1084
-1086
[3]
HAMASAKI T, 1981, JPN J APPL PHYS S, V20
[4]
POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C
[J].
IQBAL, Z
论文数:
0
引用数:
0
h-index:
0
IQBAL, Z
;
WEBB, AP
论文数:
0
引用数:
0
h-index:
0
WEBB, AP
;
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
VEPREK, S
.
APPLIED PHYSICS LETTERS,
1980,
36
(02)
:163
-165
[5]
THE ELECTRICAL RESISTANCE OF BINARY METALLIC MIXTURES
[J].
LANDAUER, R
论文数:
0
引用数:
0
h-index:
0
LANDAUER, R
.
JOURNAL OF APPLIED PHYSICS,
1952,
23
(07)
:779
-784
[6]
ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
[J].
MATSUDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUDA, A
;
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMASAKI, S
;
NAKAGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
NAKAGAWA, K
;
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
OKUSHI, H
;
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TANAKA, K
;
IIZIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
IIZIMA, S
;
MATSUMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUMURA, M
;
YAMAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMAMOTO, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
:L305
-L308
[7]
OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON
[J].
MISHIMA, Y
论文数:
0
引用数:
0
h-index:
0
MISHIMA, Y
;
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
;
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(02)
:1157
-1159
[8]
POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE
[J].
MORIN, F
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
MORIN, F
;
MOREL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
MOREL, M
.
APPLIED PHYSICS LETTERS,
1979,
35
(09)
:686
-687
[9]
RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS
[J].
SMITH, JE
论文数:
0
引用数:
0
h-index:
0
SMITH, JE
;
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
BRODSKY, MH
;
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
CROWDER, BL
;
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
;
PINCZUK, A
论文数:
0
引用数:
0
h-index:
0
PINCZUK, A
.
PHYSICAL REVIEW LETTERS,
1971,
26
(11)
:642
-&
[10]
PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY
[J].
USUI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
USUI, S
;
KIKUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
KIKUCHI, M
.
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1979,
34
(01)
:1
-1
←
1
→
共 10 条
[1]
Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances
[J].
Bruggeman, DAG
论文数:
0
引用数:
0
h-index:
0
Bruggeman, DAG
.
ANNALEN DER PHYSIK,
1935,
24
(07)
:636
-664
[2]
LOW-TEMPERATURE CRYSTALLIZATION OF DOPED A-SI-H ALLOYS
[J].
HAMASAKI, T
论文数:
0
引用数:
0
h-index:
0
HAMASAKI, T
;
KURATA, H
论文数:
0
引用数:
0
h-index:
0
KURATA, H
;
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
;
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
.
APPLIED PHYSICS LETTERS,
1980,
37
(12)
:1084
-1086
[3]
HAMASAKI T, 1981, JPN J APPL PHYS S, V20
[4]
POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C
[J].
IQBAL, Z
论文数:
0
引用数:
0
h-index:
0
IQBAL, Z
;
WEBB, AP
论文数:
0
引用数:
0
h-index:
0
WEBB, AP
;
VEPREK, S
论文数:
0
引用数:
0
h-index:
0
VEPREK, S
.
APPLIED PHYSICS LETTERS,
1980,
36
(02)
:163
-165
[5]
THE ELECTRICAL RESISTANCE OF BINARY METALLIC MIXTURES
[J].
LANDAUER, R
论文数:
0
引用数:
0
h-index:
0
LANDAUER, R
.
JOURNAL OF APPLIED PHYSICS,
1952,
23
(07)
:779
-784
[6]
ELECTRICAL AND STRUCTURAL-PROPERTIES OF PHOSPHOROUS-DOPED GLOW-DISCHARGE SI-F-H AND SI-H FILMS
[J].
MATSUDA, A
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUDA, A
;
YAMASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMASAKI, S
;
NAKAGAWA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
NAKAGAWA, K
;
OKUSHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
OKUSHI, H
;
TANAKA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TANAKA, K
;
IIZIMA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
IIZIMA, S
;
MATSUMURA, M
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
MATSUMURA, M
;
YAMAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
TOA NENRYO KOGYO KK,CHIYODA KU,TOKYO 100,JAPAN
YAMAMOTO, H
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(06)
:L305
-L308
[7]
OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON
[J].
MISHIMA, Y
论文数:
0
引用数:
0
h-index:
0
MISHIMA, Y
;
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
;
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(02)
:1157
-1159
[8]
POLYCRYSTALLINE SILICON BY GLOW-DISCHARGE TECHNIQUE
[J].
MORIN, F
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
MORIN, F
;
MOREL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Centre National d'Etudes des Télécommunications
MOREL, M
.
APPLIED PHYSICS LETTERS,
1979,
35
(09)
:686
-687
[9]
RAMAN SPECTRA OF AMORPHOUS SI AND RELATED TETRAHEDRALLY BONDED SEMICONDUCTORS
[J].
SMITH, JE
论文数:
0
引用数:
0
h-index:
0
SMITH, JE
;
BRODSKY, MH
论文数:
0
引用数:
0
h-index:
0
BRODSKY, MH
;
CROWDER, BL
论文数:
0
引用数:
0
h-index:
0
CROWDER, BL
;
NATHAN, MI
论文数:
0
引用数:
0
h-index:
0
NATHAN, MI
;
PINCZUK, A
论文数:
0
引用数:
0
h-index:
0
PINCZUK, A
.
PHYSICAL REVIEW LETTERS,
1971,
26
(11)
:642
-&
[10]
PROPERTIES OF HEAVILY DOPED GD-SI WITH LOW RESISTIVITY
[J].
USUI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
USUI, S
;
KIKUCHI, M
论文数:
0
引用数:
0
h-index:
0
机构:
Sony Corporation Research Center, Hodogaya-ku, Yokohama, 240
KIKUCHI, M
.
JOURNAL OF NON-CRYSTALLINE SOLIDS,
1979,
34
(01)
:1
-1
←
1
→