POLYCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE AT TEMPERATURES BELOW 250-DEGREES-C

被引：80

作者：

IQBAL, Z

WEBB, AP

VEPREK, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 02期

关键词：

D O I：

10.1063/1.91416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：163 / 165

页数：3

共 12 条

[1]

AZAROFF LV, 1968, ELEMENTS XRAY CRYSTA, pCH20

[2]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4]

JONES D, UNPUBLISHED

[5] RAMAN STUDY OF LASER ANNEALED SILICON [J].

MORHANGE, JF ;

KANELLIS, G ;

BALKANSKI, M .

SOLID STATE COMMUNICATIONS, 1979, 31 (11) :805-808

[6] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[7] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[8] STATISTICAL-MODEL OF CHEMICAL REACTIONS IN NONISOTHERMAL LOW-PRESSURE PLASMA [J].

VEPREK, S .

JOURNAL OF CHEMICAL PHYSICS, 1972, 57 (02) :952-&

[9] PREPARATION OF THIN LAYERS OF GE AND SI BY CHEMICAL HYDROGEN PLASMA TRANSPORT [J].

VEPREK, S ;

MARECEK, V .

SOLID-STATE ELECTRONICS, 1968, 11 (07) :683-&

[10] HETEROGENEOUS REACTIONS IN NONISOTHERMAL LOW-PRESSURE PLASMAS - PREPARATIVE ASPECTS AND APPLICATIONS [J].

VEPREK, S .

PURE AND APPLIED CHEMISTRY, 1976, 48 (02) :163-178

← 1 2 →