OPTICAL DETERMINATION OF MOBILITY AND CARRIER CONCENTRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON

被引：39

作者：

MISHIMA, Y

HIROSE, M

OSAKA, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1157 / 1159

页数：3

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共 12 条

[1] OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM
BRIGGS, HB
[J]. PHYSICAL REVIEW, 1950, 77 (02): : 287 - 287
[2] BRODSKY MH, 1970, PHYS REV B, V1, P2565
[3] SILICON GATE TECHNOLOGY
FAGGIN, F
KLEIN, T
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (08) : 1125 - &
[4] ELECTRONIC PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
HIROSE, M
TANIGUCHI, M
OSAKA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 377 - 382
[5] IIZUKA H, 1973, J JAPAN SOC APPL P S, V42, P158
[6] IIZUKA H, 1972, 4TH P C SOL STAT DEV
[7] CHEMICALLY VAPOR-DEPOSITED POLYCRYSTALLINE-SILICON FILMS
KAMINS, TI
[J]. IEEE TRANSACTIONS ON PARTS HYBRIDS AND PACKAGING, 1974, PH10 (04): : 221 - 229
[8] TECHNOLOGY FOR MONOLITHIC HIGH-POWER INTEGRATED-CIRCUITS USING POLYCRYSTALLINE SI FOR COLLECTOR AND ISOLATION WALLS
KOBAYASHI, I
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (04) : 399 - 404
[9] EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .3. ABSORPTION INTENSITY
KODERA, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 26 (02) : 377 - &
[10] P-N-JUNCTIONS IN POLYCRYSTALLINE-SILICON FILMS
MANOLIU, J
KAMINS, TI
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (10) : 1103 - &