学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
TECHNOLOGY FOR MONOLITHIC HIGH-POWER INTEGRATED-CIRCUITS USING POLYCRYSTALLINE SI FOR COLLECTOR AND ISOLATION WALLS
被引:8
作者
:
KOBAYASHI, I
论文数:
0
引用数:
0
h-index:
0
机构:
SONY CORP, RES CTR, HODOGAYA, YOKOHAMA, JAPAN
SONY CORP, RES CTR, HODOGAYA, YOKOHAMA, JAPAN
KOBAYASHI, I
[
1
]
机构
:
[1]
SONY CORP, RES CTR, HODOGAYA, YOKOHAMA, JAPAN
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1973年
/ ED20卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1973.17662
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:399 / 404
页数:6
相关论文
共 6 条
[1]
THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
BEAN, KE
HENTZSCHEL, HP
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
HENTZSCHEL, HP
COLMAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
COLMAN, D
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(05)
: 2358
-
+
[2]
NEW TECHNOLOGY FOR HIGH-POWER IC
KOBAYASHI, I
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, I
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(01)
: 45
-
+
[3]
PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS
MAI, CC
论文数:
0
引用数:
0
h-index:
0
MAI, CC
WHITEHOUSE, TS
论文数:
0
引用数:
0
h-index:
0
WHITEHOUSE, TS
THOMAS, RC
论文数:
0
引用数:
0
h-index:
0
THOMAS, RC
GOLDSTEIN, DR
论文数:
0
引用数:
0
h-index:
0
GOLDSTEIN, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 331
-
+
[4]
STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES
MENDELSON, S
论文数:
0
引用数:
0
h-index:
0
MENDELSON, S
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(05)
: 1570
-
&
[5]
DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
HUBNER, K
论文数:
0
引用数:
0
h-index:
0
HUBNER, K
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
[J].
PHYSICAL REVIEW,
1961,
123
(04):
: 1245
-
&
[6]
EFFECTS OF SUBSTRATE ORIENTATION ON EPITAXIAL GROWTH
TUNG, SK
论文数:
0
引用数:
0
h-index:
0
TUNG, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
: 436
-
&
←
1
→
共 6 条
[1]
THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
BEAN, KE
HENTZSCHEL, HP
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
HENTZSCHEL, HP
COLMAN, D
论文数:
0
引用数:
0
h-index:
0
机构:
Texas Instruments Incorporated, Dallas
COLMAN, D
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(05)
: 2358
-
+
[2]
NEW TECHNOLOGY FOR HIGH-POWER IC
KOBAYASHI, I
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, I
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1971,
ED18
(01)
: 45
-
+
[3]
PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS
MAI, CC
论文数:
0
引用数:
0
h-index:
0
MAI, CC
WHITEHOUSE, TS
论文数:
0
引用数:
0
h-index:
0
WHITEHOUSE, TS
THOMAS, RC
论文数:
0
引用数:
0
h-index:
0
THOMAS, RC
GOLDSTEIN, DR
论文数:
0
引用数:
0
h-index:
0
GOLDSTEIN, DR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(02)
: 331
-
+
[4]
STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES
MENDELSON, S
论文数:
0
引用数:
0
h-index:
0
MENDELSON, S
[J].
JOURNAL OF APPLIED PHYSICS,
1964,
35
(05)
: 1570
-
&
[5]
DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON
QUEISSER, HJ
论文数:
0
引用数:
0
h-index:
0
QUEISSER, HJ
HUBNER, K
论文数:
0
引用数:
0
h-index:
0
HUBNER, K
SHOCKLEY, W
论文数:
0
引用数:
0
h-index:
0
SHOCKLEY, W
[J].
PHYSICAL REVIEW,
1961,
123
(04):
: 1245
-
&
[6]
EFFECTS OF SUBSTRATE ORIENTATION ON EPITAXIAL GROWTH
TUNG, SK
论文数:
0
引用数:
0
h-index:
0
TUNG, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(04)
: 436
-
&
←
1
→