TECHNOLOGY FOR MONOLITHIC HIGH-POWER INTEGRATED-CIRCUITS USING POLYCRYSTALLINE SI FOR COLLECTOR AND ISOLATION WALLS

被引：8

作者：

KOBAYASHI, I ^{[1
]}

机构：

[1] SONY CORP, RES CTR, HODOGAYA, YOKOHAMA, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 04期

关键词：

D O I：

10.1109/T-ED.1973.17662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：399 / 404

页数：6

相关论文

共 6 条

[1] THERMAL AND ELECTRICAL ANISOTROPY OF POLYCRYSTALLINE SILICON
BEAN, KE
HENTZSCHEL, HP
COLMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) : 2358 - +
[2] NEW TECHNOLOGY FOR HIGH-POWER IC
KOBAYASHI, I
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (01) : 45 - +
[3] PROPERTIES OF POLYCRYSTALLINE SILICON DEPOSITED ON SILICON NITRIDE LAYERS
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[4] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES
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[5] DIFFUSION ALONG SMALL-ANGLE GRAIN BOUNDARIES IN SILICON
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[6] EFFECTS OF SUBSTRATE ORIENTATION ON EPITAXIAL GROWTH
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) : 436 - &