EFFECTS OF SUBSTRATE ORIENTATION ON EPITAXIAL GROWTH

[1] Cabrera N.B., 1963, ART AUSTR, P3

[2] EDMUNDS GH, PRIVATE COMMUNICATIO

[3] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[4] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[5] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653

[6] TUNG SK, 1962, METALLURGY SEMICONDU, V15, P87

[7] VANHOOK A, 1961, CRYSTALLIZATION THEO, P22

[1] Cabrera N.B., 1963, ART AUSTR, P3

[2] EDMUNDS GH, PRIVATE COMMUNICATIO

[3] STACKING FAULT NUCLEATION IN EPITAXIAL SILICON ON VARIOUSLY ORIENTED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) : 1570 - &

[4] STRUCTURE DEFECTS IN PYROLTIC SILICON EPITAXIAL FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (09) : 2813 - &

[5] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1 [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (07) : 649 - 653

[6] TUNG SK, 1962, METALLURGY SEMICONDU, V15, P87

[7] VANHOOK A, 1961, CRYSTALLIZATION THEO, P22