FREQUENCY CONVERSION IN IMPATT DIODES

被引：8

作者：

EVANS, WJ

HADDAD, GI

机构：

[1] Bell Telephone Laboratories, Murray, Hill, N. J.

[2] Electronic Physics Laboratory, Department of Electrical Engineering, University of Michigan, Ann Arbor, Mich

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1969年 / ED16卷 / 01期

关键词：

D O I：

10.1109/T-ED.1969.16567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large-signal model of the Read-type IMPATT diode has been used to analyze the frequency-mixing properties of the oscillating diode. The self-oscillating, two-port frequency converter is described in terms of its short-circuit admittance parameters. It is shown that in the proper circuit, parametric frequency conversion may result in a negative conductance at the input and output ports of the converter. Therefore, high-gain frequency conversion and parametric amplification are possible. Under some conditions, spurious oscillations may occur due to this negative conductance. Experimental circuits have been built which demonstrate conversion gain and parametric amplification and confirm qualitatively the theoretical results. It is also shown experimentally that some of the sideband noise of the IMPATT oscillator is due to low-frequency noise which is up converted from the bias circuit. Some of this noise can be eliminated by proper circuit design. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：78 / &

共 13 条

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