NOISE STUDIES IN UNIFORM AVALANCHE DIODES

被引:19
作者
HAITZ, RH
VOLTMER, FW
机构
关键词
D O I
10.1063/1.1754620
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:381 / &
相关论文
共 4 条
[1]   AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].
GOETZBERGER, A ;
SCARLETT, RM ;
HAITZ, RH ;
MCDONALD, B .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+
[2]  
HAITZ RH, UNPUBLISHED
[3]  
HINES ME, 1966, IEEE T, VED13, P158
[4]   PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].
SHOCKLEY, W .
SOLID-STATE ELECTRONICS, 1961, 2 (01) :35-+