DEPENDENCE OF ELECTROPHYSICAL PROPERTIES OF ZNTE THIN-FILMS ON STOICHIOMETRY

被引：12

作者：

CIORASCU, F

STANESCU, C

SPINULES.I

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 9卷 / 02期

关键词：

D O I：

10.1002/pssa.2210090206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：449 / &

相关论文

共 18 条

[1] EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION
CARDONA, M
SOMMERS, HS
[J]. PHYSICAL REVIEW, 1961, 122 (05): : 1382 - &
[2] FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE
CARDONA, M
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 : 2151 - &
[3] ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE
CARDONA, M
HARBEKE, G
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) : 813 - &
[4] EXCITONS AT L ABSORPTION EDGE IN ZINC BLENDE-TYPE SEMICONDUCTORS
CARDONA, M
HARBEKE, G
[J]. PHYSICAL REVIEW LETTERS, 1962, 8 (03) : 90 - &
[5] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE
CARDONA, M
GREENAWAY, DL
[J]. PHYSICAL REVIEW, 1963, 131 (01): : 98 - +
[6] DIMA I, 1964, THESIS MOSCOW
[7] GROSS EF, 1963, FIZ TVERD TELA, V5, P801
[8] Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3
[9] THE ABSORPTION EDGE OF ZINC TELLURIDE
LOH, E
NEWMAN, R
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 21 (3-4) : 324 - 327
[10] MOROZOVA NK, 1966, OPTIKA SPEKTROSKOPIY, V21, P192