DEPENDENCE OF THE LINEWIDTH OF A SEMICONDUCTOR-LASER ON THE MODE DISTRIBUTION

被引:10
作者
KRUGER, U [1 ]
PETERMANN, K [1 ]
机构
[1] TECH UNIV BERLIN,INST HOCHFREQUENZTECH,W-1000 BERLIN 10,GERMANY
关键词
D O I
10.1109/3.64340
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A theory as well as measurements are presented that show the dependence of the frequency noise spectrum and, therefore, of the semiconductor laser linewidth, on the mode distribution. The described theory is based on the rate equations (1), where the linewidth is strongly influenced by the gain saturation coefficients (nonlinear gain). Analytical results are restricted to two modes. Measurements show, that the linewidth change of the main mode depends on the wavelength side of the side mode (related to the wavelength mode of the main mode) and that the effect decreases with increasing mode separation. Furthermore, the theoretical and measured frequency noise spectrum of a three-mode laser are depicted showing a characteristic resonance peak for certain mode distributions. This property of the frequency noise spectrum is also described by the theory.
引用
收藏
页码:2058 / 2064
页数:7
相关论文
共 20 条
[1]   LINEWIDTH OF A SINGLE-MODE IN A MULTIMODE INJECTION-LASER [J].
ADAMS, MJ .
ELECTRONICS LETTERS, 1983, 19 (17) :652-653
[2]   DENSITY-MATRIX THEORY OF SEMICONDUCTOR-LASERS WITH RELAXATION BROADENING MODEL - GAIN AND GAIN-SUPPRESSION IN SEMICONDUCTOR-LASERS [J].
ASADA, M ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (05) :434-442
[3]   ANOMALOUS INTERACTION OF SPECTRAL MODES IN A SEMICONDUCTOR LASER [J].
BOGATOV, AP ;
ELISEEV, PG ;
SVERDLOV, BN .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :510-515
[4]   SPECTRAL LINEWIDTH OF GAIN-GUIDED AND INDEX-GUIDED INGAASP SEMICONDUCTOR-LASERS [J].
ELSASSER, W ;
GOBEL, EO .
APPLIED PHYSICS LETTERS, 1984, 45 (04) :353-355
[5]   MULTIMODE EFFECTS IN THE SPECTRAL LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
ELSASSER, W ;
GOBEL, EO .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :687-692
[6]   THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].
HENRY, CH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :259-264
[8]   THE SEMICONDUCTOR-LASER LINEWIDTH DUE TO THE PRESENCE OF SIDE MODES [J].
KRUGER, U ;
PETERMANN, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (12) :2355-2358
[9]  
KRUGER U, P ECOC89 GOTEBORG
[10]  
LIU PL, 1984, J LIGHTWAVE TECHNOL, V2, P44, DOI 10.1109/JLT.1984.1073575