FREE CARRIER REFLECTIVITY IN OPTICALLY HOMOGENEOUS SILICON

[1] QUANTUM THEORY OF FREE CARRIER ABSORPTION [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1813 - &

[2] FISTUL VI, 1969, HEAVILY DOPED SEMICO, P129

[3] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[6] KUKHARSK.AA, 1966, FIZ TVERD TELA+, V8, P603

[7] KUKHARSKII AA, 1970, SOV PHYS SEMICOND+, V4, P234

[8] LAMBERT LM, 1971, TR190171 IBM TECH RE

[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 943 - &

[10] STRELTSOV LN, 1970, SOV PHYS SEMICOND+, V4, P605

[1] QUANTUM THEORY OF FREE CARRIER ABSORPTION [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1813 - &

[2] FISTUL VI, 1969, HEAVILY DOPED SEMICO, P129

[3] MEASUREMENT OF DIFFUSED SEMICONDUCTOR SURFACE CONCENTRATIINS BY INFRARED PLASMA REFLECTION [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 432 - &

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[5] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) : 82 - 99

[6] KUKHARSK.AA, 1966, FIZ TVERD TELA+, V8, P603

[7] KUKHARSKII AA, 1970, SOV PHYS SEMICOND+, V4, P234

[8] LAMBERT LM, 1971, TR190171 IBM TECH RE

[9] COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 943 - &

[10] STRELTSOV LN, 1970, SOV PHYS SEMICOND+, V4, P605