VISIBLE PHOTOLUMINESCENCE FROM POROUS SILICON - A QUANTUM CONFINEMENT EFFECT MAINLY DUE TO HOLES

被引:110
作者
VOOS, M [1 ]
UZAN, P [1 ]
DELALANDE, C [1 ]
BASTARD, G [1 ]
HALIMAOUI, A [1 ]
机构
[1] CTR NATL ETUDES & TELECOMMUN,FRANCE TELECOM,F-38243 MEYLAN,FRANCE
关键词
D O I
10.1063/1.107598
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present results of photoluminescence experiments performed at 2 and 300 K on porous silicon layers with different porosities. The samples are obtained by electrochemical dissolution of (100) silicon wafers in hydrofluoric solution. The energy of the photoluminescence and its variation with porosity are found in good agreement with a theoretical model of quantum confinement in Si quantum wires. Electrons have to be taken into account, but it is shown that this quantum effect is mainly due (almost-equal-to 60%) to the large confinement of holes.
引用
收藏
页码:1213 / 1215
页数:3
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