ELECTRIC-FIELD ASSISTED DOPING OF SEMICONDUCTORS DURING EPITAXIAL-GROWTH

被引：4

作者：

RAJAKARUNANAYAKE, Y

MCCALDIN, JO

MCGILL, TC

机构：

[1] Thomas J. Watson, Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91081-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We describe a novel technique to improve doping in semiconductors, by the application of external electric fields during crystal growth. The dopants are modeled as charged, mobile species that are free to diffuse and drift under electric fields. In the case of molecular beam expitaxial (MBE) growth, we solve for the steady state of these species in a moving coordinate frame that travels with the growth front. We have specifically applied our analysis to Li donors in n-type ZnTe. Our results indicate that excellent improvements in the doping concentrations could be obtained under normal MBE growth conditions, with the applications, with the application of substantial electric fields.

引用

页码：782 / 786

页数：5

共 23 条

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