PHOTOELECTRON DIFFRACTION EFFECTS IN XPS ANGULAR-DISTRIBUTIONS FROM GAAS(110) AND GE(110) SINGLE-CRYSTALS

被引：52

作者：

OWARI, M ^{[1
]}

KUDO, M ^{[1
]}

NIHEI, Y ^{[1
]}

KAMADA, H ^{[1
]}

机构：

[1] UNIV TOKYO,FAC EXPTL ENDOCRINOL,BUNKYO KU,TOKYO 113,JAPAN

来源：

关键词：

D O I：

10.1016/0368-2048(81)80022-9

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：131 / 140

页数：10

共 16 条

[1] STRUCTURE OF LAB6 (001) SURFACE STUDIED BY ANGLE-RESOLVED XPS AND LEED
AONO, M
OSHIMA, C
TANAKA, T
BANNAI, E
KAWAI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) : 2761 - 2764
[2] BAIRD RJ, 1977, PHYS REV B, V15, P666, DOI 10.1103/PhysRevB.15.666
[3] BRUNNER J, 1978, HELV PHYS ACTA, V51, P21
[4] COOPER JW, 1969, PHYS REV, V117, P157
[5] ESCA STUDIES OF CLEAN SI (111) SURFACE
ERICKSON, NE
[J]. PHYSICA SCRIPTA, 1977, 16 (5-6): : 462 - 465
[6] ANGULAR VARIATIONS IN CORE-LEVEL XPS PEAK INTENSITY RATIOS FROM SINGLE-CRYSTAL SOLIDS
EVANS, S
RAFTERY, E
THOMAS, JM
[J]. SURFACE SCIENCE, 1979, 89 (1-3) : 64 - 75
[7] Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
[8] FADLEY CS, 1972, ELECTRON SPECTROSCOP, P233
[9] PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY
HILL, JM
ROYCE, DG
FADLEY, CS
WAGNER, LF
GRUNTHANER, FJ
[J]. CHEMICAL PHYSICS LETTERS, 1976, 44 (02) : 225 - 231
[10] STRUCTURAL AND CHEMICAL-STATE ANALYSIS OF THE HEAT-TREATED AU-GASB(110) INTERFACE BY MEANS OF ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY (ARXPS)
KOSHIZAKI, N
KUDO, M
OWARI, M
NIHEI, Y
KAMADA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L349 - L352