STRUCTURAL AND CHEMICAL-STATE ANALYSIS OF THE HEAT-TREATED AU-GASB(110) INTERFACE BY MEANS OF ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY (ARXPS)

被引:23
作者
KOSHIZAKI, N [1 ]
KUDO, M [1 ]
OWARI, M [1 ]
NIHEI, Y [1 ]
KAMADA, H [1 ]
机构
[1] UNIV TOKYO,FAC ENGN,DEPT IND CHEM,BUNKYO KU,TOKYO 113,JAPAN
关键词
D O I
10.1143/JJAP.19.L349
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:L349 / L352
页数:4
相关论文
共 16 条
[1]   STRUCTURE OF LAB6 (001) SURFACE STUDIED BY ANGLE-RESOLVED XPS AND LEED [J].
AONO, M ;
OSHIMA, C ;
TANAKA, T ;
BANNAI, E ;
KAWAI, S .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2761-2764
[2]  
BAIRD RJ, 1977, PHYS REV B, V15, P666, DOI 10.1103/PhysRevB.15.666
[3]  
BRUNNER J, 1978, HELV PHYS ACTA, V51, P21
[4]   PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].
CHYE, PW ;
LINDAU, I ;
PIANETTA, P ;
GARNER, CM ;
SU, CY ;
SPICER, WE .
PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559
[5]   ANGULAR VARIATIONS IN CORE-LEVEL XPS PEAK INTENSITY RATIOS FROM SINGLE-CRYSTAL SOLIDS [J].
EVANS, S ;
RAFTERY, E ;
THOMAS, JM .
SURFACE SCIENCE, 1979, 89 (1-3) :64-75
[6]  
Fadley C. S., 1976, Progress in Solid State Chemistry, V11, P265, DOI 10.1016/0079-6786(76)90013-3
[7]   ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].
GYULAI, J ;
MAYER, JW ;
RODRIGUEZ, V ;
YU, AYC ;
GOPEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+
[8]   PROPERTIES OF OXIDIZED SILICON AS DETERMINED BY ANGULAR-DEPENDENT X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
HILL, JM ;
ROYCE, DG ;
FADLEY, CS ;
WAGNER, LF ;
GRUNTHANER, FJ .
CHEMICAL PHYSICS LETTERS, 1976, 44 (02) :225-231
[9]   UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS [J].
JAROS, M ;
HARTNAGEL, HL .
SOLID-STATE ELECTRONICS, 1975, 18 (11) :1029-1030
[10]   ANGULAR-DEPENDENCE OF XPS INTENSITIES FROM GAAS (110) SURFACE [J].
KUDO, M ;
OWARI, M ;
NIHEI, Y ;
GOHSHI, Y ;
KAMADA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 :275-277