UNDERSTANDING OF OHMIC CONTACT FORMATION WITH GE DOPING OF N-GAAS

[1] [Anonymous], 1971, SEMICONDUCT SEMIMET

[2] BHAGRAVA RN, 1967, PHYS REV, V161, P695

[3] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] HARTNAGEL H, TO BE PUBLISHED

[6] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762

[7] JAROS M, TO BE PUBLISHED

[8] Milnes A.G, 1973, DEEP IMPURITIES SEMI, P54

[9] PHILIPS JC, 1969, COVALENT BONDING CRY, P232

[10] TRANSPORT PROPERTIES OF GOLD GERMANIUM GALLIUM ARSENIDE METAL SEMICONDUCTOR SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3575 - &

[1] [Anonymous], 1971, SEMICONDUCT SEMIMET

[2] BHAGRAVA RN, 1967, PHYS REV, V161, P695

[3] METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (05) : 381 - +

[4] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +

[5] HARTNAGEL H, TO BE PUBLISHED

[6] CALCULATIONS OF IMPURITY STATES IN SEMICONDUCTORS .1. [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (10): : 1753 - 1762

[7] JAROS M, TO BE PUBLISHED

[8] Milnes A.G, 1973, DEEP IMPURITIES SEMI, P54

[9] PHILIPS JC, 1969, COVALENT BONDING CRY, P232

[10] TRANSPORT PROPERTIES OF GOLD GERMANIUM GALLIUM ARSENIDE METAL SEMICONDUCTOR SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3575 - &