TRANSPORT PROPERTIES OF GOLD GERMANIUM GALLIUM ARSENIDE METAL SEMICONDUCTOR SYSTEM

被引:28
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PRUNIAUX, BR
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10.1063/1.1660772
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O59 [应用物理学];
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页码:3575 / &
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[1]   DEPENDENCE OF SCHOTTKY BARRIER HEIGHT ON DONOR CONCENTRATION [J].
ARCHER, RJ ;
YEP, TO .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :303-&
[2]   SURFACE STATE AND INTERFACE EFFECTS ON CAPACITANCE-VOLTAGE RELATIONSHIP IN SCHOTTKY BARRIERS [J].
CROWELL, CR ;
ROBERTS, GI .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3726-&
[3]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[4]   OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].
HARRIS, JS ;
NANNICHI, Y ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&
[5]   AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J].
KAHNG, D .
BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1) :215-+
[6]   EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
SUMNER, GG .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3744-&
[7]   REFLECTION X-RAY TOPOGRAPHY OF GAAS AND GAP CLEAVAGE FACES [J].
ROZGONYI, GA ;
HASZKO, SE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1562-&
[8]   EFFECT OF SURFACE TREATMENT ON GALLIUM ARSENIDE SCHOTTKY BARRIER DIODES [J].
SMITH, BL .
SOLID-STATE ELECTRONICS, 1968, 11 (04) :502-&
[9]  
SZE SM, 1970, SOLID STATE ELECTRON, V13, P727
[10]  
SZE SM, 1969, PHYSICS SEMIDONDUCTO