4.3-TERAHERTZ 4-WAVE-MIXING SPECTROSCOPY OF INGAASP SEMICONDUCTOR AMPLIFIERS

被引：41

作者：

DOTTAVI, A ^{[1
]}

IANNONE, E ^{[1
]}

MECOZZI, A ^{[1
]}

SCOTTI, S ^{[1
]}

SPANO, P ^{[1
]}

DALLARA, R ^{[1
]}

GUEKOS, G ^{[1
]}

ECKNER, J ^{[1
]}

机构：

[1] ETH ZURICH,INST QUANTUM ELECTR,CH-8093 ZURICH,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112586

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A four-wave mixing experiment in a bulk InGaAsP traveling-wave semiconductor amplifier is reported. The maximum pump-probe detuning is 4.3 THz. The equivalent time resolution of 37 fs is high enough to measure with good accuracy the time constant of spectral-hole burning (100 fs in our case). The simultaneous presence of spectral-hole burning and of an instantaneous, within our time resolution, saturation process is clearly displayed.

引用

页码：2633 / 2635

页数：3

共 20 条

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