ABOVE-BAND AND BELOW-BAND FEMTOSECOND NONLINEARITIES IN ACTIVE ALGAAS WAVE-GUIDES

被引：55

作者：

HULTGREN, CT ^{[1
]}

DOUGHERTY, DJ ^{[1
]}

IPPEN, EP ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期

关键词：

D O I：

10.1063/1.108084

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Femtosecond optical pulses were used to study the gain and refractive index dynamics in a bulk AlGaAs diode laser. Experiments were performed at wavelengths above and below the band gap of the diode-laser active region. The above-band gain dynamics exhibit an ultrafast transient that has not been seen before in AlGaAs devices. We attribute this dynamic to spectral-hole burning and a delay in carrier heating. The below-band refractive index measurements demonstrate that carrier heating by free-carrier absorption is important and that there is a delay in the onset of this heating of approximately 120 fs.

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页码：2767 / 2769

页数：3

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