CARRIER HEATING AND SPECTRAL HOLE BURNING IN STRAINED-LAYER QUANTUM-WELL LASER-AMPLIFIERS AT 1.5-MU-M

被引：69

作者：

HALL, KL

LENZ, G

IPPEN, EP

KOREN, U

RAYBON, G

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the first polarization studies of femtosecond gain dynamics in strained-layer multiple-quantum-well laser amplifiers. We observe a response consistent with spectral hole burning when the diode is biased in the absorbing regime. In the gain regime, we show that the carriers are heated by free-carrier absorption and that there is a measurable delay (approximately 200 fs) in the thermalization of the hot-carrier distribution. Subsequent cooling to the lattice temperature follows with a time constant of approximately 1 ps.

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页码：2512 / 2514

页数：3

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