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CARRIER HEATING AND SPECTRAL HOLE BURNING IN STRAINED-LAYER QUANTUM-WELL LASER-AMPLIFIERS AT 1.5-MU-M
被引:69
作者:
HALL, KL
LENZ, G
IPPEN, EP
KOREN, U
RAYBON, G
机构:
[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
[2] AT&T BELL LABS,HOLMDEL,NJ 07733
关键词:
D O I:
10.1063/1.108486
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We present the first polarization studies of femtosecond gain dynamics in strained-layer multiple-quantum-well laser amplifiers. We observe a response consistent with spectral hole burning when the diode is biased in the absorbing regime. In the gain regime, we show that the carriers are heated by free-carrier absorption and that there is a measurable delay (approximately 200 fs) in the thermalization of the hot-carrier distribution. Subsequent cooling to the lattice temperature follows with a time constant of approximately 1 ps.
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页码:2512 / 2514
页数:3
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