HIGH QUANTUM EFFICIENCY, HIGH-POWER, MODULATION DOPED GAINAS STRAINED-LAYER QUANTUM WELL LASER-DIODES EMITTING AT 1.5-MU-M

被引：84

作者：

THIJS, PJA

VANDONGEN, T

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 25期

关键词：

D O I：

10.1049/el:19891161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1735 / 1737

页数：3

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