LOW THRESHOLD HIGHLY EFFICIENT STRAINED QUANTUM-WELL LASERS AT 1.5 MICROMETER WAVELENGTH

被引：46

作者：

KOREN, U ^{[1
]}

ORON, M ^{[1
]}

YOUNG, MG ^{[1
]}

MILLER, BI ^{[1
]}

DEMIGUEL, JL ^{[1
]}

RAYBON, G ^{[1
]}

CHIEN, M ^{[1
]}

机构：

[1] TELEFON I&D,E-28043 MADRID,SPAIN

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 07期

关键词：

Lasers and laser applications; Quantum optics;

D O I：

10.1049/el:19900302

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low threshold and high efficiency operation of strained layer multiple quantum well InGaAs/InGaAsP lasers at 1.5 micrometres wavelength is demonstrated. Current thresholds as low as 2.2 mA with threshold current densities of 440 A/cm2 have been obtained. With 7.3 mA threshold current, quantum efficiency was 65%/front facet. At 20 mW CW output power the drive current was as low as 53 mA. © 1990, The Institution of Electrical Engineers. All rights reserved.

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页码：465 / 467

页数：3

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