THRESHOLD AND MEMORY SWITCHING IN POLYCRYSTALLINE SILICON

被引：15

作者：

MAHAN, JE

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 05期

关键词：

D O I：

10.1063/1.93538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：479 / 481

页数：3

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[1] ADLER D, 1977, SCI AM MAY
[2] SWITCHING TIMES IN AMORPHOUS BORON, BORON PLUS CARBON, AND SILICON THIN-FILMS
CHARLES, HK
FELDMAN, C
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) : 819 - 830
[3] THRESHOLD SWITCHING IN HYDROGENATED AMORPHOUS-SILICON
DENBOER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (09) : 812 - 813
[4] ELECTROTHERMAL MODEL OF SWITCHING IN AMORPHOUS-SILICON FILMS
DEY, SK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 445 - 448
[5] SWITCHING AND TEMPERATURE EFFECTS IN LATERAL FILMS OF AMORPHOUS SILICON
FULENWIDER, JE
HERSKOWITZ, GJ
[J]. PHYSICAL REVIEW LETTERS, 1970, 25 (05) : 292 - +
[6] SWITCHING PROPERTIES OF THIN NIO FILMS
GIBBONS, JF
BEADLE, WE
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (11) : 785 - &
[7] SUBSTRATE EFFECTS IN THEORY OF NEGATIVE DIFFERENTIAL RESISTANCE
HAYES, TM
THORNBUR.DD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (05): : 744 - 747
[8] THERMAL EFFECTS IN AMORPHOUS-SEMICONDUCTOR SWITCHING
KAPLAN, T
ADLER, D
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (10) : 418 - &
[9] THRESHOLD SWITCHING IN CHALCOGENIDE GLASS FILMS
LEE, SH
HENISCH, HK
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (05) : 230 - 231
[10] MAHAN JE, UNPUB