SWITCHING TIMES IN AMORPHOUS BORON, BORON PLUS CARBON, AND SILICON THIN-FILMS

被引：13

作者：

CHARLES, HK ^{[1
]}

FELDMAN, C ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,APPL PHYS LAB,8621 GEORGIA AVE,SILVER SPRING,MD 20910

来源：

关键词：

D O I：

10.1063/1.321652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：819 / 830

页数：12

共 24 条

[1]

BERGLUND CN, 1972, IEEE T ELECTRON DEVI, VED17, P137

[2]

Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

BUCKLEY, WD ;

HOLMBERG, SH .

[4] SWITCHING AND NEGATIVE RESISTANCE IN AMORPHOUS BORON LAYERS [J].

FELDMAN, C ;

GUTIERREZ, WA .

[5] VACUUM-DEPOSITED SILICON DEVICES ON FUSED SILICA SUBSTRATES [J].

FELDMAN, C ;

PLACHY, R .

[6]

Feldman C., 1970, Journal of Non-Crystalline Solids, V2, P82, DOI 10.1016/0022-3093(70)90123-7

FELDMAN, C ;

CHARLES, HK .

[8]

FELDMAN C, P INT S BORON TBILIS

[9]

FELDMAN C, 1973, J ELECTROCHEM SOC, V128, P1111

[10]

FELDMAN C, 1970, THIN SOLID FILMS, V5, pA1