VACUUM-DEPOSITED SILICON DEVICES ON FUSED SILICA SUBSTRATES

被引：11

作者：

FELDMAN, C ^{[1
]}

PLACHY, R ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,APPL PHYS LAB,SILVER SPRING,MD 20910

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 05期

关键词：

D O I：

10.1149/1.2401888

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：685 / 688

页数：4

共 21 条

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[8]

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[10] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

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