ELECTROTHERMAL MODEL OF SWITCHING IN AMORPHOUS BORON AND SILICON THIN-FILMS

被引：10

作者：

FELDMAN, C ^{[1
]}

CHARLES, HK ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,APPL PHYS LAB,8621 GEORGIA AVE,SILVER SPRING,MD 20910

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 15卷 / 03期

关键词：

D O I：

10.1016/0038-1098(74)91140-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：551 / 554

页数：4

共 21 条

[1]

BOER KW, 1970, J APPL PHYS, V41, P2575

[2] Thermal Mechanism of the Switching Phenomenon [J].

Croitoru, N. ;

Popescu, C. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (04) :1047-1055

[3] SWITCHING AND NEGATIVE RESISTANCE IN AMORPHOUS BORON LAYERS [J].

FELDMAN, C ;

GUTIERREZ, WA .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2474-+

[4] MASS-SPECTRA ANALYSES OF IMPURITIES AND ION CLUSTERS IN AMORPHOUS AND CRYSTALLINE SILICON FILMS [J].

FELDMAN, C ;

SATKIEWICZ, FG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1111-1116

[5] OBSERVATION OF FILAMENT FORMATION IN AMORPHOUS FILMS DURING SWITCHING [J].

FELDMAN, C ;

MOORJANI, K .

THIN SOLID FILMS, 1970, 5 (01) :R1-&

[6] SWITCHING AND BREAKDOWN IN FILMS [J].

KLEIN, N .

THIN SOLID FILMS, 1971, 7 (3-4) :149-+

[7] SEMICONDUCTOR PROPERTIES OF BORON IN ELECTRICAL BREAKDOWN RANGE [J].

KLEIN, W .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) :5797-&

[8]

KOLOMIETS BT, 1969, SOV PHYS SEMICOND+, V3, P267

[9] ON PHYSICS OF AVALANCHE BREAKDOWN IN SEMICONDUCTORS [J].

MONCH, W .

PHYSICA STATUS SOLIDI, 1969, 36 (01) :9-+

[10]

Moorjani K., 1970, Journal of Non-Crystalline Solids, V4, P248, DOI 10.1016/0022-3093(70)90048-7

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