SEMICONDUCTOR PROPERTIES OF BORON IN ELECTRICAL BREAKDOWN RANGE

被引：14

作者：

KLEIN, W

机构：

[1] Night Vision Laboratory, Fort Belvoir

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 12期

关键词：

D O I：

10.1063/1.1656051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：5797 / &

共 15 条

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KEARNS, DR .

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[3]

DIETZ W, 1965, BORON, V2, P301

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MATERIALS RESEARCH BULLETIN, 1968, 3 (02) :95-&

[5]

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GEACINTOV, N ;

POPE, M .

JOURNAL OF CHEMICAL PHYSICS, 1966, 45 (10) :3884-+

[7] ELECTRON PARAMAGNETIC RESONANCE AND ELECTRICAL CONDUCTIVITY OF BORON [J].

GEIST, D ;

KLEIN, W .

PHYSICS LETTERS, 1965, 17 (03) :186-&

[8]

GEIST D, 1968, 14 P COLL AMP LJUBLJ, P377

[9] UBER ZUSAMMENHANGE ZWISCHEN ELEKTRONENSPINRESONANZ ELEKTRISCHER LEITFAHIGKEIT UND PHOTOLEITUNG BEI REINEM UND DOTIERTEM BOR [J].

KLEIN, W ;

GEIST, D .

ZEITSCHRIFT FUR PHYSIK, 1967, 201 (04) :411-&

[10]

KLEIN W, 1968, P INT C BORON

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