DONOR BINDING-ENERGIES DETERMINED FROM TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN UNDOPED AND ALUMINUM-DOPED BETA SIC FILMS

被引：31

作者：

FREITAS, JA ^{[1
]}

BISHOP, SG ^{[1
]}

NORDQUIST, PER ^{[1
]}

GIPE, ML ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1695 / 1697

页数：3

共 16 条

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[10] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION [J].

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2011-2016

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