CONVERSION OF A VACUUM GENERATORS MODEL V80H MOLECULAR-BEAM EPITAXY SYSTEM FROM HGCDTE TO FLUORIDE DEPOSITION AND FROM 3-IN TO 4-IN WAFER HANDLING CAPABILITIES

被引：2

作者：

BOGDON, JM

SINHAROY, S

NOREIKA, AJ

机构：

[1] Westinghouse Science and Technology Center, Pittsburgh

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.577293

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have converted a Vacuum Generators V80H molecular-beam epitaxy (MBE) system, originally designed to handle 3-in. diam wafers, to accommodate and process 4-in. diam wafers. The MBE system, which was previously used in the same laboratory for the deposition of HgCdTe films, has been subjected to a thorough cleaning procedure, and is now being used successfully to grow high quality BaMgF4 films on 4-in. silicon wafers. The modification procedure is described in this note.

引用

页码：2420 / 2422

页数：3

共 2 条

[1] GROWTH AND CHARACTERIZATION OF FERROELECTRIC BAMGF4 FILMS [J].

SINHAROY, S ;

BUHAY, H ;

FRANCOMBE, MH ;

TAKEI, WJ ;

DOYLE, NJ ;

RIEGER, JH ;

LAMPE, DR ;

STEPKE, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :409-413

[2] THE GROWTH OF HIGH-PURITY HOMOEPITAXIAL INSB LAYERS IN A MOLECULAR-BEAM EPITAXY REACTOR PREVIOUSLY USED FOR CDTE GROWTH [J].

WILLIAMS, GM ;

WHITEHOUSE, CR ;

WARD, JJ ;

BRUMHEAD, D ;

ASHLEY, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (01) :79-83

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