THE GROWTH OF HIGH-PURITY HOMOEPITAXIAL INSB LAYERS IN A MOLECULAR-BEAM EPITAXY REACTOR PREVIOUSLY USED FOR CDTE GROWTH

被引：8

作者：

WILLIAMS, GM

WHITEHOUSE, CR

WARD, JJ

BRUMHEAD, D

ASHLEY, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.584832

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：79 / 83

页数：5

共 9 条

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[2]

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[4] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH STRUCTURAL PERFECTION, HETERO-EPITAXIAL CDTE-FILMS ON INSB (001) [J].

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JONES, GR ;

WILLIAMS, GM ;

YOUNG, IM .

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[5]

Hilsum C., 1961, INT SERIES MONOGRAPH, V1

[6]

MCCONVILLE CF, IN PRESS

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PARKER EHC, 1985, TECHNOLOGY PHYSICS M

[8] MOLECULAR-BEAM EPITAXY OF (100)INSB FOR CDTE INSB DEVICE APPLICATIONS [J].

WILLIAMS, GM ;

WHITEHOUSE, CR ;

MARTIN, T ;

CHEW, NG ;

CULLIS, AG ;

ASHLEY, T ;

SYKES, DE ;

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WILLIAMS, RH .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1526-1532

[9] AN MBE ROUTE TOWARDS CDTE/INSB SUPERLATTICES [J].

WILLIAMS, GM ;

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CHEW, NG ;

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