MOLECULAR-BEAM EPITAXY OF (100)INSB FOR CDTE INSB DEVICE APPLICATIONS

被引：41

作者：

WILLIAMS, GM

WHITEHOUSE, CR

MARTIN, T

CHEW, NG

CULLIS, AG

ASHLEY, T

SYKES, DE

MACKEY, K

WILLIAMS, RH

机构：

[1] LOUGHBOROUGH UNIV TECHNOL,LOUGHBOROUGH CONSULTANTS LTD,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

[2] UNIV WALES UNIV COLL CARDIFF,DEPT PHYS,CARDIFF CF1 1XL,S GLAM,WALES

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 05期

关键词：

D O I：

10.1063/1.339936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1526 / 1532

页数：7

相关论文

共 18 条

[1] MOLECULAR-BEAM EPITAXY OF INSB (110)
BOSCH, AJ
VANWELZENIS, RG
SCHANNEN, OFZ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) : 3434 - 3439
[2] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS
CHEW, NG
CULLIS, AG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 142 - 144
[3] CHEW NG, 1984, I PHYS C SER, V68, P427
[4] THERMODYNAMIC STUDY OF INSB WITH A MASS SPECTROMETER
DEMARIA, G
DROWART, J
INGHRAM, MG
[J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (04) : 1076 - 1081
[5] EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2436 - 2448
[6] IDENTIFICATION OF SPECIES EVOLVED IN EVAPORATION OF III-V COMPOUNDS
FOXON, CT
JOYCE, BA
FARROW, RFC
GRIFFITHS, RM
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (17) : 2422 - 2435
[7] GROWTH OF INAS1-XSBX(0 LESS-THAN X LESS-THAN 1) AND INSB-INASSB SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
LEE, GS
LO, Y
LIN, YF
BEDAIR, SM
LAIDIG, WD
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1219 - 1221
[8] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX
NOREIKA, AJ
GREGGI, J
TAKEI, WJ
FRANCOMBE, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 558 - 561
[9] NOREIKA AJ, 1981, J APPL PHYS, V52, P12
[10] RHEED STUDY OF INSB FILMS GROWN BY MOLECULAR-BEAM EPITAXY
OE, K
ANDO, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L417 - L420