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MOLECULAR-BEAM EPITAXY OF INSB (110)
被引:26
作者
:
BOSCH, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
BOSCH, AJ
[
1
]
VANWELZENIS, RG
论文数:
0
引用数:
0
h-index:
0
机构:
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
VANWELZENIS, RG
[
1
]
SCHANNEN, OFZ
论文数:
0
引用数:
0
h-index:
0
机构:
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
SCHANNEN, OFZ
[
1
]
机构
:
[1]
DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS
来源
:
JOURNAL OF APPLIED PHYSICS
|
1985年
/ 58卷
/ 09期
关键词
:
D O I
:
10.1063/1.335763
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:3434 / 3439
页数:6
相关论文
共 23 条
[1]
CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
ASPNES, DE
论文数:
0
引用数:
0
h-index:
0
ASPNES, DE
STUDNA, AA
论文数:
0
引用数:
0
h-index:
0
STUDNA, AA
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(04)
: 316
-
318
[2]
BOSCH A, UNPUB
[3]
RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB
CHANG, R
论文数:
0
引用数:
0
h-index:
0
CHANG, R
GODDARD, WA
论文数:
0
引用数:
0
h-index:
0
GODDARD, WA
[J].
SURFACE SCIENCE,
1984,
144
(2-3)
: 311
-
320
[4]
THERMODYNAMIC STUDY OF INSB WITH A MASS SPECTROMETER
DEMARIA, G
论文数:
0
引用数:
0
h-index:
0
DEMARIA, G
DROWART, J
论文数:
0
引用数:
0
h-index:
0
DROWART, J
INGHRAM, MG
论文数:
0
引用数:
0
h-index:
0
INGHRAM, MG
[J].
JOURNAL OF CHEMICAL PHYSICS,
1959,
31
(04)
: 1076
-
1081
[5]
ELECTRICAL PROPERTIES OF IN2O3
DEWIT, JHW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTRECHT,INORG CHEM DEPT,CROESE ST 77A,UTRECHT,NETHERLANDS
UNIV UTRECHT,INORG CHEM DEPT,CROESE ST 77A,UTRECHT,NETHERLANDS
DEWIT, JHW
[J].
JOURNAL OF SOLID STATE CHEMISTRY,
1973,
8
(02)
: 142
-
149
[6]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[7]
FOXON CT, 1981, CURRENT TOPICS MATER, V7
[8]
ELASTIC CONSTANTS AND THERMAL-EXPANSION OF SINGLE-CRYSTAL CDTE
GREENOUGH, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
GREENOUGH, RD
PALMER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
PALMER, SB
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1973,
6
(05)
: 587
-
592
[9]
Hultgren RR, 1973, SELECTED VALUES THER
[10]
ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
POLASKO, KJ
论文数:
0
引用数:
0
h-index:
0
POLASKO, KJ
WRIGHT, SC
论文数:
0
引用数:
0
h-index:
0
WRIGHT, SC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(09)
: 763
-
765
←
1
2
3
→
共 23 条
[1]
CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
ASPNES, DE
论文数:
0
引用数:
0
h-index:
0
ASPNES, DE
STUDNA, AA
论文数:
0
引用数:
0
h-index:
0
STUDNA, AA
[J].
APPLIED PHYSICS LETTERS,
1981,
39
(04)
: 316
-
318
[2]
BOSCH A, UNPUB
[3]
RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB
CHANG, R
论文数:
0
引用数:
0
h-index:
0
CHANG, R
GODDARD, WA
论文数:
0
引用数:
0
h-index:
0
GODDARD, WA
[J].
SURFACE SCIENCE,
1984,
144
(2-3)
: 311
-
320
[4]
THERMODYNAMIC STUDY OF INSB WITH A MASS SPECTROMETER
DEMARIA, G
论文数:
0
引用数:
0
h-index:
0
DEMARIA, G
DROWART, J
论文数:
0
引用数:
0
h-index:
0
DROWART, J
INGHRAM, MG
论文数:
0
引用数:
0
h-index:
0
INGHRAM, MG
[J].
JOURNAL OF CHEMICAL PHYSICS,
1959,
31
(04)
: 1076
-
1081
[5]
ELECTRICAL PROPERTIES OF IN2O3
DEWIT, JHW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV UTRECHT,INORG CHEM DEPT,CROESE ST 77A,UTRECHT,NETHERLANDS
UNIV UTRECHT,INORG CHEM DEPT,CROESE ST 77A,UTRECHT,NETHERLANDS
DEWIT, JHW
[J].
JOURNAL OF SOLID STATE CHEMISTRY,
1973,
8
(02)
: 142
-
149
[6]
EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONS
FARROW, RFC
论文数:
0
引用数:
0
h-index:
0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
FARROW, RFC
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1974,
7
(17)
: 2436
-
2448
[7]
FOXON CT, 1981, CURRENT TOPICS MATER, V7
[8]
ELASTIC CONSTANTS AND THERMAL-EXPANSION OF SINGLE-CRYSTAL CDTE
GREENOUGH, RD
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
GREENOUGH, RD
PALMER, SB
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
UNIV HULL, DEPT APPL PHYS, HULL HU6 7RX, YORKSHIRE, ENGLAND
PALMER, SB
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1973,
6
(05)
: 587
-
592
[9]
Hultgren RR, 1973, SELECTED VALUES THER
[10]
ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
POLASKO, KJ
论文数:
0
引用数:
0
h-index:
0
POLASKO, KJ
WRIGHT, SC
论文数:
0
引用数:
0
h-index:
0
WRIGHT, SC
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(09)
: 763
-
765
←
1
2
3
→