RECONSTRUCTION OF THE (110) SURFACES FOR III-V SEMICONDUCTORS - 5 SYSTEMS INVOLVING INDIUM OR SB

被引：25

作者：

CHANG, R

GODDARD, WA

机构：

来源：

SURFACE SCIENCE | 1984年 / 144卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(84)90103-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：311 / 320

页数：10

共 24 条

[1] ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6
[2] RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE
BARTON, JJ
GODDARD, WA
MCGILL, TC
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[3] SURFACE-STATES AND SURFACE RESONANCES IN INP, INAS, AND INSB
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DOW, JD
[J]. PHYSICAL REVIEW B, 1982, 26 (10): : 5702 - 5705
[4] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS
CHADI, DJ
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2074 - 2082
[5] ATOMIC GEOMETRY OF GASB(110) - DETERMINATION VIA ELASTIC LOW-ENERGY ELECTRON-DIFFRACTION INTENSITY ANALYSIS
DUKE, CB
PATON, A
KAHN, A
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3436 - 3444
[6] SURFACE ATOMIC GEOMETRY OF COVALENTLY BONDED SEMICONDUCTORS - INSB(110) AND ITS COMPARISON WITH GAAS(110) AND ZNTE(110)
DUKE, CB
MEYER, RJ
PATON, A
YEH, JL
TSANG, JC
KAHN, A
MARK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 501 - 505
[7] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM INAS(110)
DUKE, CB
PATON, A
KAHN, A
BONAPACE, CR
[J]. PHYSICAL REVIEW B, 1983, 27 (10): : 6189 - 6198
[8] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM GAP(110)
DUKE, CB
PATON, A
FORD, WK
KAHN, A
CARELLI, J
[J]. PHYSICAL REVIEW B, 1981, 24 (02): : 562 - 573
[9] THE ATOMIC GEOMETRY OF GAAS(110) REVISITED
DUKE, CB
RICHARDSON, SL
PATON, A
KAHN, A
[J]. SURFACE SCIENCE, 1983, 127 (02) : L135 - L143
[10] STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS
DUKE, CB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 732 - 735

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