MOLECULAR-BEAM EPITAXY OF INSB (110)

被引：26

作者：

BOSCH, AJ ^{[1
]}

VANWELZENIS, RG ^{[1
]}

SCHANNEN, OFZ ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,CTR SUBMICRON TECHNOL,2600 GA DELFT,NETHERLANDS

来源：

关键词：

D O I：

10.1063/1.335763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3434 / 3439

页数：6

共 23 条

[11] THEORY AND APPLICATION OF A 2-LAYER HALL TECHNIQUE
LARRABEE, RD
THURBER, WR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) : 32 - 36
[12] GROWTH OF SB AND INSB BY MOLECULAR-BEAM EPITAXY
NOREIKA, AJ
FRANCOMBE, MH
WOOD, CEC
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7416 - 7420
[13] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX
NOREIKA, AJ
GREGGI, J
TAKEI, WJ
FRANCOMBE, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 558 - 561
[14] RHEED STUDY OF INSB FILMS GROWN BY MOLECULAR-BEAM EPITAXY
OE, K
ANDO, S
SUGIYAMA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L417 - L420
[15] TANG X, UNPUB
[16] THE GAAS(001)-C(4X4) AND (2X4) RECONSTRUCTIONS - A COMPARATIVE PHOTOEMISSION-STUDY
VANDERVEEN, JF
LARSEN, PK
NEAVE, JH
JOYCE, BA
[J]. SOLID STATE COMMUNICATIONS, 1984, 49 (07) : 659 - 662
[17] ON THE PROPERTIES OF INSB QUANTUM WELLS
VANWELZENIS, RG
RIDLEY, BK
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (02) : 113 - 120
[18] VANWELZENIS RG, SOLID STATE ELECTRON
[19] WILLARDSON RK, 1967, SEMICONDUCTORS SEMIM, V2
[20] AN MBE ROUTE TOWARDS CDTE/INSB SUPERLATTICES
WILLIAMS, GM
WHITEHOUSE, CR
CHEW, NG
BLACKMORE, GW
CULLIS, AG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 704 - 708