ON THE (110) ORIENTATION AS THE PREFERRED ORIENTATION FOR THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS ON GE, GAP ON SI, AND SIMILAR ZINCBLENDE-ON-DIAMOND SYSTEMS

被引：92

作者：

KROEMER, H

POLASKO, KJ

WRIGHT, SC

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：763 / 765

页数：3

相关论文

共 15 条

[1] GE-GAAS(110) INTERFACE FORMATION
BAUER, RS
MCMENAMIN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1444 - 1449
[2] ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES
DUKE, CB
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1978, 8 (01): : 69 - 91
[3] FAN JCC, 1979, APPL PHYS LETT, V35, P875, DOI 10.1063/1.90990
[4] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .3. DEPOSITION ON HIGH INDEX PLANES AND ON CURVED SURFACES
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 825 - 827
[5] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .2. DETERIORATION OF THE (III) SURFACE OF GERMANIUM AT 570-DEGREES-C-850-DEGREES-C
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 821 - 824
[6] EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE
GABOR, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) : 817 - 820
[7] POLAR HETEROJUNCTION INTERFACES
HARRISON, WA
KRAUT, EA
WALDROP, JR
GRANT, RW
[J]. PHYSICAL REVIEW B, 1978, 18 (08): : 4402 - 4410
[8] SURFACE RECONSTRUCTION ON SEMICONDUCTORS
HARRISON, WA
[J]. SURFACE SCIENCE, 1976, 55 (01) : 1 - 19
[9] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
JONA, F
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[10] MILLER D, COMMUNICATION