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EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .3. DEPOSITION ON HIGH INDEX PLANES AND ON CURVED SURFACES

被引：6
作者：
GABOR, T
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期
关键词：
D O I：
10.1149/1.2426262
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：825 / 827
页数：3
相关论文
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[2]   THE TRANSPORT OF GALLIUM ARSENIDE IN THE VAPOR PHASE BY CHEMICAL REACTION [J].
FERGUSSON, RR ;
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (05) :585-592
[3]   EPITAXIAL GROWTH OF GALLIUM ARSENIDE ON GERMANIUM SUBSTRATES .1. THE RELATIONSHIP BETWEEN FAULT FORMATION IN GALLIUM ARSENIDE FILMS AND THE SURFACE OF THEIR GERMANIUM SUBSTRATE [J].
GABOR, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :817-820
[4]  
INGHAM HS, 1960, MET SOC C, V12, P285
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