AZIDE PHOTORESISTS FOR DEEP UV LITHOGRAPHY

被引：24

作者：

IWAYANAGI, T

KOHASHI, T

NONOGAKI, S

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 12期

关键词：

D O I：

10.1149/1.2129591

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2759 / 2760

页数：2

共 10 条

[1]

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[2]

HTOO MS, 1968, KODAK PHOTORESIST SE, V1, P25

[3]

IWAMATSU S, 1980, SOLID STATE TECHNOL, V23, P81

[4]

KOHASHI T, 1979, PHOTOGR SCI ENG, V23, P168

[5] DEEP-UV CONFORMABLE-CONTACT PHOTOLITHOGRAPHY FOR BUBBLE CIRCUITS [J].

LIN, BJ .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1976, 20 (03) :213-221

[6] DEEP UV LITHOGRAPHY [J].

LIN, BJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1317-1320

[7] DEEP-UV PHOTOLITHOGRAPHY [J].

MIMURA, Y ;

OHKUBO, T ;

TAKEUCHI, T ;

SEKIKAWA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (03) :541-550

[8] CHEMICAL MECHANISMS IN PHOTORESIST SYSTEMS .3. CROSSLINKING AND RECIPROCITY FAILURE IN BISAZIDE RESIST [J].

SHIMIZU, S ;

BIRD, GR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (02) :273-277

[9]

TSUDA M, 1979, PHOTOGR SCI ENG, V23, P290

[10]

1960, Patent No. 2940853

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