DIRECT COMPARISON OF INGAAS/INGAALAS AND INGAAS/INGAASP QUANTUM-WELL MODULATORS

被引：7

作者：

HAWDON, BJ ^{[1
]}

TUTKEN, T ^{[1
]}

HANGLEITER, A ^{[1
]}

GLEW, RW ^{[1
]}

WHITEAWAY, JEA ^{[1
]}

机构：

[1] BNR EUROPE,HARLOW,ESSEX,ENGLAND

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

OPTICAL MODULATION; OPTOELECTRONICS;

D O I：

10.1049/el:19930472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using picosecond pump-probe measurements, InGaAs/InGaAlAs and InGaAs/InGaAsP quantum well modulator structures am compared directly. It is found that the short-pulse exciton saturation intensity for the Al-based structure is at least 10 times that for the P-based system. The more efficient carrier sweep-out observed in the Al-based modulator is due to the lower valence-band discontinuity, making it by far the more attractive structure for high-power application.

引用

页码：705 / 707

页数：3

共 3 条

[1] INTEREST IN ALGALNAS ON INP FOR OPTOELECTRONIC APPLICATIONS [J].