INCREASED OPTICAL SATURATION INTENSITIES IN GAINAS MULTIPLE QUANTUM-WELLS BY THE USE OF ALGAINAS BARRIERS

被引：37

作者：

WOOD, TH

CHANG, TY

PASTALAN, JZ

BURRUS, CA

SAUER, NJ

JOHNSON, BC

机构：

[1] AT&T Bell Laboratories, Crawford Hill and Holmdel Laboratories, Holmdel

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 03期

关键词：

MODULATORS; OPTICAL MODULATION; QUANTUM OPTICS;

D O I：

10.1049/el:19910166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quaternary AlGaInAs is demonstrated to be an excellent barrier material for long-wavelength quantum well modulators. In addition to lower trap density than ternary AlInAs, the low valence-band discontinuity results in saturation intensities at least a factor of 30 higher than InGaAs wells with InP barriers. Decreasing barrier thicknesses increases saturation intensities by an additional factor of 5.

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页码：257 / 259

页数：3

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