TRAPS IN MOLECULAR-BEAM EPITAXIAL IN0.53(GAXAL1-X)0.47AS/INP

被引：12

作者：

BISWAS, D ^{[1
]}

CHIN, A ^{[1
]}

PAMULAPATI, J ^{[1
]}

BHATTACHARYA, P ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, SOLID STATE ELECTR LAB, ANN ARBOR, MI 48109 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep-level transient spectroscopy measurements have been made on molecular-beam epitaxial In0.53(GaxAl1-x) 0.47As lattice matched to InP. Several electron and hole traps, with activation energies ranging from 0.14 to 0.79 eV, have been identified and characterized. In particular, systems of electron traps (0.30≤ΔE T≤0.79 eV) and hole traps (0.14≤ΔET≤0.31 eV) with monotonically changing activation energies have been identified in these alloys. We believe these traps are dominant in this alloy system.

引用

页码：2450 / 2453

页数：4

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