CASE FOR LARGE AUGER RECOMBINATION CROSS-SECTIONS ASSOCIATED WITH DEEP CENTERS IN SEMICONDUCTORS

被引：26

作者：

JAROS, M ^{[1
]}

机构：

[1] UNIV MASSACHUSETTS,DEPT PHYS & ASTRON,AMHERST,MA 01003

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 12期

关键词：

D O I：

10.1016/0038-1098(78)90909-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1071 / 1074

页数：4

共 17 条

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