EFFECT OF HOLE PILE-UP AT HETEROINTERFACE ON MODULATION VOLTAGE IN GAINASP ELECTROABSORPTION MODULATORS

被引：36

作者：

SUZUKI, M

TANAKA, H

AKIBA, S

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 02期

关键词：

D O I：

10.1049/el:19890065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：88 / 89

页数：2

共 7 条

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[5] HIGH-SPEED CHARACTERISTICS AT HIGH INPUT OPTICAL POWER OF GAINASP ELECTROABSORPTION MODULATORS [J].

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ELECTRONICS LETTERS, 1988, 24 (20) :1272-1273

[6]

SUZUKI M, 1987, J LIGHTWAVE TECHNOL, V5, P1277

[7]

WOOD TH, 1988, IEEE J LIGHTWAVE TEC, V6, P743

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