HIGH-SENSITIVITY OF VPE-GROWN INGAAS/INP-HETEROSTRUCTURE APD WITH BUFFER LAYER AND GUARD-RING STRUCTURE

被引：24

作者：

MATSUSHIMA, Y

NODA, Y

KUSHIRO, Y

SEKI, N

AKIBA, S

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 06期

关键词：

D O I：

10.1049/el:19840158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：235 / 236

页数：2

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