RECEIVER SENSITIVITY OF INGAAS/INP HETEROSTRUCTURE AVALANCHE PHOTO-DIODE WITH INGAASP BUFFER LAYERS AT 1.5-1.6-MU-M REGION

被引：8

作者：

MATSUSHIMA, Y

SEKI, N

AKIBA, S

NODA, Y

KUSHIRO, Y

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 20期

关键词：

D O I：

10.1049/el:19830575

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：845 / 846

页数：2

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