LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES

被引：36

作者：

ANDO, H

SUSA, N

KANBE, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 09期

关键词：

D O I：

10.1109/T-ED.1982.20890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1408 / 1413

页数：6

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