PLANAR INP AVALANCHE PHOTO-DIODE WITH ZN-DIFFUSED GUARD RING

被引：4

作者：

ANDO, H

SUSA, N

KANBE, H

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 08期

关键词：

D O I：

10.1049/el:19810205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：292 / 294

页数：3

相关论文

共 6 条

[1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE
ANDO, H
KANBE, H
ITO, M
KANEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280
[2] ANDO H, UNPUBLISHED
[3] PLANAR GUARDED AVALANCHE-DIODES IN INP FABRICATED BY ION-IMPLANTATION
DONNELLY, JP
ARMIENTO, CA
DIADIUK, V
GROVES, SH
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 74 - 76
[4] INGAAS AVALANCHE PHOTO-DIODE WITH INP P-N-JUNCTION
KANBE, H
SUSA, N
NAKAGOME, H
ANDO, H
[J]. ELECTRONICS LETTERS, 1980, 16 (05) : 163 - 165
[5] SINGLE-MODE SYSTEMS AND COMPONENTS FOR LONGER WAVELENGTHS
KIMURA, T
[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1979, 26 (12): : 987 - 1010
[6] INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE
OSAKA, F
NAKAZIMA, K
KANEDA, T
SAKURAI, T
[J]. ELECTRONICS LETTERS, 1980, 16 (18) : 716 - 716