INP-INGAASP AVALANCHE PHOTO-DIODES WITH NEW GUARD RING STRUCTURE

被引：17

作者：

OSAKA, F ^{[1
]}

NAKAZIMA, K ^{[1
]}

KANEDA, T ^{[1
]}

SAKURAI, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 18期

关键词：

D O I：

10.1049/el:19800508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：716 / 716

页数：1

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280
[2] FOREST SR, 1980, TUNNELING SOURCE LAR
[3] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS
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[4] IMPACT IONIZATION RATIO IN IN0.73GA0.27AS0.57P0.43
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[6] INGAASP HETEROSTRUCTURE AVALANCHE PHOTO-DIODES WITH HIGH AVALANCHE GAIN
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[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 251 - 253
[7] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M
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