EFFECT OF SUBSTRATE PREPARATION ON SMOOTHNESS OF LIQUID-PHASE EPITAXIAL (ALGA)AS ON GAP

被引：10

作者：

ETTENBERG, M ^{[1
]}

MCFARLANE, SH ^{[1
]}

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1974年 / 23卷 / 03期

关键词：

D O I：

10.1016/0022-0248(74)90241-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：233 / 236

页数：4

相关论文

共 11 条

[1] ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS
ABRAHAMS, MS
BUIOCCHI, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2855 - &
[2] ALLENSON MB, 1972, J PHYS D, V5, P689
[3] EFFECTS OF DISLOCATION DENSITY ON PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 901 - 906
[4] ETTENBERG M, 1972, 4 P INT S GAAS REL C, P29
[5] GUITERREZ WA, 1973, APPL PHYS LETT, V22, P292
[6] THIN SOLUTION MULTIPLE LAYER EPITAXY
LOCKWOOD, HF
ETTENBERG, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 81 - +
[7] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
PILKUHN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &
[8] TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS
MATTES, BL
ROUTE, RK
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 16 (03) : 219 - 222
[9] SURFACE IRREGULARITIES DUE TO SPIRAL GROWTH IN LPE LAYERS OF ALGAAS AND INGAASP
MOON, RL
ANTYPAS, GA
[J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (02) : 109 - 112
[10] PHOTOEMISSION FROM GAAS-CS-O
TURNBULL, AA
EVANS, GB
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1968, 1 (02) : 155 - &